vp0808l, VP1008L vishay siliconix document number: 70218 s-00530erev. c, 03-apr-00 www.vishay.com faxback 408-970-5600 11-1 p-channel enhancement-mode mosfet transistors
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) vp0808l 80 5 @ v gs = 10 v 2 to 4.5 0.28 VP1008L 100 5 @ v gs = 10 v 2 to 4.5 0.28 high-side switching low on-resistance: 2.5 moderate threshold: 3.4 v fast switching speed: 40 ns low input capacitance: 75 pf ease in driving switches low offset (error) voltage low-voltage operation high-speed switching easily driven without buffer drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply, converter circuits motor control 1 to-226aa (to-92) top view s d g 2 3 vp0808l VP1008L
parameter symbol vp0808l VP1008L unit drain-source voltage v ds 80 100 v gate-source voltage v gs 30 30 v continuous drain current (t 150 c) t a = 25 c i d 0.28 0.28 a (t j = 150 c) t a = 100 c i d 0.17 0.17 a pulsed drain current a i dm 3 3 power dissipation t a = 25 c p d 0.8 0.8 w power dissipation t a = 100 c p d 0.32 0.32 w maximum junction-to-ambient r thja 156 156 c/w maximum junction-to-case r thjc c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature.
vp0808l, VP1008L vishay siliconix www.vishay.com faxback 408-970-5600 11-2 document number: 70218 s-00530erev. c, 03-apr-00
limits vp0808l VP1008L parameter symbol test conditions typ a min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 110 80 100 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 3.4 2 4.5 2 4.5 v gate - body leakage i gss v ds = 0 v, v gs = 20 v 100 100 na gate - body leakage i gss t j = 125 c 500 500 na zgvl dic i v ds = 80 v, v gs = 0 v 10 a zero gate voltage drain current i dss t j = 125 c 500 a zero gate v oltage drain current i dss v ds = 100 v, v gs = 0 v 10 a t j = 125 c 500 on-state drain current b i d(on) v ds = 15 v, v gs = 10 v 2 1.1 1.1 a drain - source on - resistance b r ds(on) v gs = 10 v, i d = 1 a 2.5 5 5 drain - source on - resistance b r ds(on) t j = 125 c 4.4 8 8 forward transconductance b g fs v ds = 10 v, i d = 0.5 a 325 200 200 s common source output conductance b g os v ds = 7.5 v, i d = 0.1 a 0.45 ms dynamic input capacitance c iss v25vv0v 75 150 150 f output capacitance c oss v ds = 25 v, v gs = 0 v f = 1 mhz 40 60 60 pf reverse transfer capacitance c rss f 1 mhz 18 25 25 switching c turn - on t ime t d(on) v25vr47 11 15 15 turn - on t ime t r v dd = 25 v, r l = 47 i d 0.5 a, v gen = 10 v 30 40 40 ns turn - of f time t d(off) i d 0 . 5 a , v gen = 10 v r g = 25 20 30 30 ns turn - of f t ime t f 20 30 30 notes a. for design aid only, not subject to production testing.. vpdv10 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
vp0808l, VP1008L vishay siliconix document number: 70218 s-00530erev. c, 03-apr-00 www.vishay.com faxback 408-970-5600 11-3
20 16 12 8 4 0 3.8 v 0 0.4 0.8 1.2 1.6 2.0 3.6 v 3.4 v 3.2 v ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (a) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) v gs = 10 v t j = 25 c t j = 25 c t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) v gs = 4.0 v 2.0 012345 1.6 1.2 0.8 0.4 0 9 v 8 v 7 v 6 v 5 v 4 v 0.5 0.4 0.3 0 0 2 10 0.2 0.1 4 6 8 125 c t j = 55 c 10 8 6 0 0 0.5 3.0 4 2 1.0 1.5 2.0 2.5 7 0 4 8 12 16 20 6 5 4 0 3 2 1 i d = 0.1 a 0.5 a 1.0 a t j = 25 c 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 0.5 a v ds = 10 v v gs = 10 v 25 c r ds(on) drain-source on-resistance ( ) )
vp0808l, VP1008L vishay siliconix www.vishay.com faxback 408-970-5600 11-4 document number: 70218 s-00530erev. c, 03-apr-00
15.0 12.5 10.0 0 0 100 500 7.5 5.0 200 300 400 2.5 80 v 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k 10 50 100 100 10 1 20 200 160 120 0 0 10 50 80 40 20 30 40 10 1 0.01 1.0 1.5 4.5 0.1 2.0 2.5 3.0 3.5 4.0 threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge drive resistance effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) 55 c q g total gate charge (pc) 125 c drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) c rss c oss c iss v gs = 0 v f = 1 mhz i d = 0.5 a v ds = 50 v v dd = 25 v r l = 50 v gs = 0 to 10 v i d = 500 ma t d(on) t d(off) t r t f t j = 150 c 25 c 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 v ds = 5 v r g gate resistance ( )
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